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Publications

Journal Papers

2023
  1. N. Alnami, R. Kumar, S. K. Saha, A. Alnami, M. E. Ware, Y. I. Mazur, G. J. Salamo, “Temperature Dependent Behavior of Sub-monolayer Quantum Dot Based Solar Cell” Sol. Energy Mater. Sol. Cells., 259, 112448 (2023).
  2. D. Gayakwad, D. Singh, R. Kumar, Y. I. Mazur, S-Q. Yu, G. J. Salamo, S. Mahapatra and K. R. Khiangte “Epitaxial growth of Ge1-xSnx on c – plane sapphire substrate by molecular beam epitaxy” J. Cryst. Growth, 618, 127306 (2023).
2022
  1. E. Wangila, S. K. Saha, R. Kumar, A. Kuchuk, C. Gunder, S. Amoah, K. Khiangte, Z. Chen, F. Yu, G. J. Salamo, “Single crystalline Ge thin film growth on c-plane sapphire substrates by molecular beam epitaxy (MBE)” CrystEngComm, 24, 4372 (2022).
2021
  1. N. Alnami, R. Kumar*, A. Kuchuk, Y. Maidaniuk, S. K. Saha, A. A. Alnami, R. Alhelais, A. Kawagy, M. E. Ware, Y. I. Mazur, G. J. Salamo, “InAs Nanostructures for Solar Cell: Improved Efficiency by Submonolayer Quantum Dot” Sol. Energy Mater. Sol. Cells. 224, 111026 (2021).  
  2. Y. Maidaniuk, R. Kumar, Y. I. Mazur, A. V. Kuchuk, M. Benamara, P. M. Lytvyn, G. J. Salamo, “Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy” Appl. Phys. Letter 118, 062104 (2021).
  3. R. Kumar*, S. K. Saha, A. Kuchuk, Y. Maidaniuk, F. Oliveira, Q. Yan, M. Benamara, Y. I. Mazur, S-Q. Yu, G. J. Salamo, “GaAs Layer on c-plane Sapphire for Light Emitting Sources” Appl. Surf. Sci.  542, 148554 (2021).       
2020
  1. S. K. Saha, R. Kumar*, A. Kuchuk, S-Q. Yu, G. J. Salamo, “GaAs Epitaxial Growth on R-Plane Sapphire Substrate” J. Cryst. Growth 548, 125848 (2020).
  2. R. Kumar*, Y. Maidaniuk, S. K. Saha, Y. I. Mazur, G. J. Salamo, “Evolution of InAs Quantum Dots and Wetting Layer on GaAs (001): Peculiar Photoluminescence near Onset of Quantum Dot Formation” J. Appl. Phys. 127, 065306 (2020).
2019
  1.  S. K. Saha, R. Kumar*, A. Kuchuk, M. Z. Alavijeh, Y. Maidaniuk, Y. I. Mazur, S-Q. Yu, G. J. Salamo, “Crystalline GaAs thin film growth on c-plane sapphire substrate” Cryst. Growth Des. 19, 5088 (2019).
2018
  1. R. Kumar*, Y. Maidaniuk, A. Kuchuk, S. K. Saha, P. K. Ghosh, Y. I. Mazur, M. E. Ware, G. J. Salamo, “Excitation intensity and thickness dependent emission mechanism from an ultrathin InAs layer in GaAs matrix” J. Appl. Phys. 124, 235303 (2018).
  2. A. Bag, S. Das, R. Kumar, D. Biswas, “Evolution of lateral V-defects on InGaN/GaN on Si(111) during PAMBE: the role of strain on defect kinetics” CrystEngComm 20, 4151 (2018).
  3. P. K. Ghosh, M. Sarollahi, C. Li, T. White, D. T. Debu, Q. Yan, A. Kuchuk, R. Kumar, S. Shetty, G. J. Salamo, and M. E. Ware, “High temperature capacitors using AlN grown by MBE as the dielectric” J. Vac. Sci. Technol. B 36, 041202 (2018).
  4. Y. Zhang, Y. Wu, X. Wang, L. Ying, R. Kumar, Z. Yu, E. R. Fossum, J. Liu, G. Salamo, and S.-Q. Yu, “Detecting Single Photons Using Capacitive Coupling of Single Quantum Dots” ACS Photonics 5, 2008 (2018).
2017
  1.  Y. Zhang, Y. Wu, X. Wang, E. R. Fossum, R. Kumar, J. Liu, G. Salamo, and S.-Q. Yu, “Non-avalanche single photon detection without carrier transit-time delay through quantum capacitive coupling” Optical Express 25, 26508 (2017).
  2. S. Das, S. Ghosh, R. Kumar, A. Bag, D. Biswas, “Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-Assisted Molecular Beam Epitaxy,” Transaction on Electron Devices 64, 4650 (2017).
  3. S. Das, A. Bag, R. Kumar, D. Biswas, “Fast Response (7.6s) Acetone Sensing by InGaN/GaN on Si (111) at 373 K,” Electronic Device Letter. 38, 383 (2017).
2016
  1. R. Kumar*, A. Bag, P. Mukhopadhyay, S. Das and D. Biswas, “Investigation of Cross-Hatch Surface and Study of Anisotropic Relaxation and Dislocation on InGaAs on GaAs (001),” Electron. Mater. Lett. 12, 356 (2016).
  2. R. Kumar*, D. Biswas, “Tilt investigation of In(Al,Ga)As Metamorphic Buffer Layers on GaAs (001) substrate: A Novel Technique for Tilt Determination,” Cryst. Res. Technol. 51, 723 (2016).
  3. A. Chakraborty, S. Ghosh, P. Mukhopadhyay, S. K. Jana, S. M. Dinara, A. Bag, M. K. Mahata, R. Kumar, S. Das, P. Das and D. Biswas, “Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructures,” Electron. Mater. Lett. 12, 232 (2016).
  4. S. Das, S. Majumdar, R. Kumar, S. Ghosh, D. Biswas, “Thermodynamic Analysis of Acetone sensing in Pd/AlGaN/GaN heterostructures Schottky diodes at low temperatures,” Scripta Materialia. 113, 39 (2016).
2015
  1. R. Kumar*, A. Bag, P. Mukhopadhyay, S. Das, and D. Biswas, “Comparison of Different Grading Schemes in InGaAs Metamorphic Buffers on GaAs Substrate: Tilt Dependence on Cross-Hatch Irregularities,” Appl. Surf. Sci. 357, 922 (2015). 
  2. A. Bag, R. Kumar, P. Mukhopadhyay, M. K. Mahata, A. Chakraborty, S. Ghosh, S. K. Jana, D. Biswas, “Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening“ Electron. Mater. Lett. 11, 707 (2015).
  3. A. Bag, P. Das, S. Ghosh, P. Mukhopadhyay, S. M. Dinara, R. Kumar, A. Chakraborty, D. Biswas, “Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current“ IETE Technical Review 33, 7 (2015).
  4. A. Bag, P. Das, R. Kumar, P. Mukhopadhyay, S. Majumdar, S. Kabi, D. Biswas, “2DEG modulation in double quantum well enhancement mode nitride HEMT“ Physica E 74, 59 (2015).
  5. S. M. Dinara, S. K. Jana, S. Ghosh, P. Mukhopadhyay, R. Kumar, A. Chakraborty, S. Bhattacharya, D. Biswas, “Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis” AIP Advances 5, 047136 (2015).
  6. P. Mukhopadhyay, R. Kumar, S. Ghosh, A. Chakraborty, A. Bag, S. Kabi, P. Banerji, D. Biswas, “A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si (100)” J. Cryst. Growth 418, 138 (2015). 
  7. R. Kumar*, P. Mukhopadhyay, A. Bag, S. Kr. Jana, A. Chakraborty, S. Das, M. K. Mahata, and D. Biswas, "Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness" Appl. Surf. Sci. 324, 304 (2015).
2014
  1. M. K. Mahata, S. Ghosh, S. K. Jana, A. Chakraborty, A. Bag, P. Mukhopadhyay, R. Kumar, D. Biswas, “Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra-thin buffer” AIP Advances 4, 117120 (2014).
  2. P. Das, N. N. Halder, R. Kumar, S. K. Jana, S. Kabi, B. Borisov, A. Dabiran, P. Chow, and D. Biswas, "Graded Barrier AlGaN/AlN/GaN Heterostructure for Improved 2DEG Carrier Concentration and Mobility", Electron. Mater. Lett. 10, 1087 (2014)
  3. S. K. Jana, P. Mukhopadhyay, S. Ghosh, S. Kabi, A. Bag, R. Kumar, and D. Biswas, “High-resolution X-ray diffraction analysis of AlxGa1xN/InxGa1xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations,” J. Appl. Phys. 115, 174507 (2014).

Patents

1. A. Bag, Palash Das, R. Kumar, P. Mukhopadhyay and D. Biswas, “Double Quantum Well Enhancement Mode Nitride HEMT”, Indian Patent Application No.: 0277/KOL/2015 dated March 13, 2015.

2. S.-Q. Yu, G. J. Salamo, R. Kumar, S. K. Saha, S. M. El-Ghazaly, Y. Zhang, “Integrated Microwave Photonics on a Sapphire Platform” U.S. Patent filed.

Conference and Proceeding Papers

  1. Anshul Rawtani, A. Tomar, R. Kumar, “Theoretical Investigation of Thickness Variation on Ga2O3 MESFET: Depletion to Enhancement Mode Transition”, Oral presentation in DELCON 2023 held at Chitkara University, Chandigarh, India, 24-26 Feb 2023. 10.1109/DELCON57910.2023.10127322
  2. S. K. Mourya, R. Kumar, A. Garg, G. Malik, and R. Chandra, “Growth of Functional Thin Film Coatings by sputtering for Diverse Technological Applications”, Oral presentation IUMRS-ICA 2022, held at IIT Jodhpur, India, 19-23 Dec 2022.
  3. S. K. Saha, R. Kumar, A. Kuchuk, Y. Maidaniuk, Y. I. Mazur, S-Q. Yu, G. J. Salamo, “MBE growth of High Quality GaAs on C-plane Sapphire Substrate” Oral presentation in NAMBE 2019.
  4. E. J. Montgomery, C. Jing, S. Poddar, A. Afanasev, S. Zhang, R. Kumar, G. Salamo, “Nanostructured Photocathodes For Spin-Polarized Electron Beams” Presented in North American Particle Accelerator Conference (NAPAC) 2019 held at Michigan, USA.
  5. R. Kumar, Y. Maidaniuk, A. Kuchuk, S. K. Saha, P. Ghosh, S. Shetty, Y. I. Mazur, M. E. Ware, G. J. Salamo, “Excitation intensity and InAs thickness dependent luminescence properties of ultrathin InAs layer in GaAs matrix” Poster Presentation in MRS Fall Meeting 2018.
  6. S. K. Saha, R. Kumar, Andrian Kuchuk, T. Al. Morgan, P.K. Ghosh, M. Zamani-Alavijeh, Shui-Qing Yu, G.J. Salamo, “III-As Growth on c-plane Sapphire by MBE” Poster Presentation in MRS Fall Meeting 2018.
  7. P.K.Ghosh, Mirsaeid Sarollahi, R. Kumar, S. K. Saha, G.J. Salamo, T. Al. Morgan, “AlN Capacitors for High temperature Systems” Oral Presentation in MRS Fall Meeting 2018.
  8. R. Kumar, S. K. Saha, T. Al. Morgan, P.K. Ghosh, M. Zamani-Alavijeh, G.J. Salamo,“ Reduction of Twin formation in GaAs/Sapphire grown by MBE” Oral Presentation in the 14th International Conference on Mid-IR Optoelectronics: Materials and Devices 2018.
  9. S. K. Saha, R. Kumar, T. Al. Morgan, P.K. Ghosh, M. Zamani-Alavijeh, S.-Q. Yu, G.J. Salamo,“ III-As Growth on c-plane Sapphire by MBE” Oral Presentation in the 14th International Conference on Mid-IR Optoelectronics: Materials and Devices 2018.
  10. Jiaju Ma; Yang Zhang; Xiaoxin Wang; Lei Ying; Saleh Masoodian; Zhiyuan Wang; Dakota A. Starkey; Wei Deng; Rahul Kumar; Yang Wu; Seyed Amir Ghetmiri; Zongfu Yu; Shui-Qing Yu; Gregory J. Salamo; Eric R. Fossum; Jifeng Liu, “Prospects and fundamental limitations of room temperature, non-avalanche, semiconductor photon-counting sensors” Oral presentation in Proc. SPIE 10212, 10.1117/12.2264958
  11. Y. Zhang, Y. Wu, X. Wang, E. R. Fossum, R. Kumar, J. Liu, G. Salamo, and S.-Q. Yu, “Harnessing Quantum Wave Nature of Individual Electrons for Single Photon Detection” Oral presentation in CLEO:2018. Electronic ISBN: 978-1-943580-42-2
  12. R. Kumar, A. Bag, S. Das, D. Biswas, “Tilt analysis of In(Al)GaAs single and graded multi-layer samples on GaAs (001) substrate,” Oral presentation in IWPSD 2015.
  13. A. Chakraborty, S. Ghosh, P. Mukhopadhyay, S.M. Dinara, A. Bag, M.K. Mahata, R. Kumar, S. Das, S.K. Jana, S. Majumdar, D. Biswas, “Trapping Effect Analysis of AlGaN/InGaN/GaN Heterostructure by Conductance-Frequency Measurement” MRS Fall Meeting 2015 held at Boston, Massachusetts, USA.
  14. S. Majumdar, R. Kumar, S. Das, M. Mahata, D. Biswas, “Utilization of Support Vector Machine in determining the optimum operating temperature of ternary III-Arsenide alloys grown by MBE” EMRS Fall Meeting 2015, Warsaw, Poland
  15. S. Das, S. Majumder, R. Kumar, A Chakraborty, A Bag, D. Biswas, “Simplified gas sensor model based on AlGaN/GaN heterostructure Schottky diode” 4th National Conference on AMRP 2015. DOI: https://doi.org/10.1063/1.4929172
  16. S. Majumdar, S. Shaik, S. Das, R. Kumar, A. Bag, A. Chakraborty, M. Mahata, S. Ghosh, D. Biswas, “Temperature dependent etching of Gallium Nitride layers grown by PA -MBE” International Conference on Microwave and Photonics (ICMAP), 2015 held at Dhanbad, India. DOI: 10.1109/ICMAP.2015.7408773 
  17. S. Ghosh, P. Mukhapadhay, S. K. Jana, R. Kumar, A. Bag, A. Chakraborty, S. Kabi, D. Biswas, “Non-destructive Characterization and Correlation with Transport Properties of InGaAs Channel Based HEMT Heterostructures” CS MANTECH 2015.
  18. R. Kumar, P. Mukhopadhyay, A. Bag, S. K. Jana, S. Das, M. K. Mahata, S. M. Dinara, and D. Biswas “Comprehensive study of AlGaAs/GaAs heterostructures grown by MBE: Structural and compositional analysis” 2nd ICEE held in Bangalore, Dec 2014. DOI: 10.1109/ICEmElec.2014.7151137
  19. S. Das, S. Majumdar, R. Kumar, M. K. Mahata, S. M. Dinara, D. Biswas “Comprehensive modeling of gas sensor based on Si3N4 passivatedAlGaN/GaN Schottky diode” 2nd ICEE held in Bangalore, Dec 2014. DOI: 10.1109/ICEmElec.2014.7151192
  20. A. Bag, P. Das, S. Ghosh, P. Mukhopadhyay, S. M. Dinara, R. Kumar, A. Chakraborty, D. Biswas “Fowler Nordheim Tunneling Contribution in AlGaN/GaN on Si (111) Schottky Barrier Current” 2nd ICEE held in Bangalore, Dec 2014. DOI:10.1080/02564602.2015.1042933
  21. P. Mukhopadhyay, R. Kumar, A. Bag, S. Ghosh, S. K. Jana, S. Kabi and D. Biswas, “Effect of Growth Temperature Variation on Crystalline Quality of AlGaAs/InGaAs Hetero-interface” 18th International conference on Molecular Beam Epitaxy 2014 held in Flagstaff, USA. 
  22. A. Bag, P. Mukhopadhyay, S. Ghosh, R. Kumar, A. Chakraborty, S. M. Dinara, S. Kabi and D. Biswas, “Effect of Longitudinal Electric Field and Self Heating of Channel on Linearity and Gain of AlGaN/GaN HEMT on Sapphire (0001)” IEEE TechSym 2014, IIT Kharagpur. DOI: 10.1109/TechSym.2014.6808083 
  23. M. Mahata, S. Ghosh, S. Jana, P. Mukhopadhyay, A. Bag, S. M. Dinara, R. Kumar, S. Das, A. Chakrabarty, “Growth and characterization of Al0.15Ga0.85As/GaAs pseudomorphic heterostructure by MBE”, IEEE TechSym 2014, IIT Kharagpur. DOI:10.1109/techsym.2014.6808082 
  24. A. Bag, P. Mukhopadhyay, S. Ghosh, R. Kumar, S. K. Jana, S. Kabi and D. Biswas, “Effect of Vertical and Longitudinal Electric Field on 2DEG of AlGaN/GaN HEMT on Silicon: A Qualitative Reliability Study” published in conference proceedings of IWPSD 2013, Amity University, Noida, India. DOI: https://doi.org/10.1007/978-3-319-03002-9_19

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