Publications/Patents

Patents

US Granted/Applied

S. Kim, K. J. Kuhn, T. Ghani, A. Murthy, M. Armstrong, R. Rios, A. Pethe and W.Rachmady, “Integration methods to fabricate internal spacers for nanowire devices”, US 9,484,447 B2
A. Cappellani, A. Pethe, T. Ghani and H. Gomez, “Methods for fabricating strained gateall-around semiconductor devices by fin oxidation using an undercut etch-stop layer”, US 9,484,272
A. J. Pethe, T. Ghani, M. Bohr, C. Webb, H. Gomez and A. Cappellani, “Gate Contact structure over active gate and method to fabricate the same”, US 9,461,143 B2
F. Greer, A. Joshi, K. Kashefi, A. S. Lee, A. Pethe and J. Watanabe, “Reduction of native oxides by annealing in reducing gas or plasma”, US 9,312,137
A. Cappellani, P. Pathi, B.E. Beattie and A.J. Pethe, “Three-dimensional germaniumbased devices formed on globally or locally isolated substrates”, US 9,041,106
J.Su, A. Bodke, A. Pethe and J. Watanabe, “Oxide removal by remote plasma treatment with fluorine and oxygen radicals”, US 8,945,414 B2
A. Cappellani, A.J. Pethe, T. Ghani and H. Gomez, “Strained gate-all-around semiconductor device formed on globally or locally isolated substrates”, US 8,735,869
A. Murthy, D. B. Aubertine, T. Ghani, A.J. Pethe, “Semiconductor Device having doped epitaxial region and its methods of fabrication”, US 8,598,003 B2
A. Joshi, S. Barstow, P. Besser, A. Bodke, G. Bouche, N. Fuchigami, Z. Hong, S. Koh, A.S. Lee, S. Majumdar, A. Pethe and M. Raymond, “Semiconductor Device Metal-insulator-Semiconductor contacts with interface layers and methods to form the same”, US 14/576,597 Application
S. Majumdar, A. Joshi, K. Kashefi, A.S. Lee, A. Pethe and B. Yang, “Metal-insulatorsemiconductor (MIS) contact with controlled defect density”, US 14/315,718 Application
B. Yang, A. Pethe, A. Lee, A. Joshi, A. Bodke, K. Kashefi and S. Majumdar, “Methods for depositing an aluminum oxide layer over germanium substrates in the fabrication of integrated circuits”, US 14/044,514 Application
B. Yang, A. Pethe, A. Lee, A. Joshi, A. Bodke, K. Kashefi and S. Majumdar, “Methods for removing a native oxide layer from germanium substrates in the fabrication of integrated circuits”, US 14/044,376 Application
A. Pethe, J. S. Sandford, C. J. Weigand and R. D. James, “Improved area scaling on trigate transistors”, US 2013/041020 Application

Publications

Fatima, A., Pethe, A., “An RRAM based Neuromorphic Accelerator for Speech based Emotion Recognition”, Neuromorphic Computing Systems for Industry 4.0, Book Chapter, IGI Global, 2023;
Fatima, A., Pethe, A., “Embedded System with In-Memory Compute Neuromorphic Accelerator for Multiple Applications”, Smart Embedded Systems: Recent Advances and Applications, Book Chapter, CRC Press: Taylor & Francis Group, 2023;
Kar, A., and Pethe A., "Implementing Programmable Multi-leveled Cell ReRAMs for Analog Matrix-Vector Multipliers", Microelectronics Jounral 2022 accepted.
Fatima, A., Pethe, A., “Implementation of RRAM based Swish Activation Function and its Derivative on 28nm FD-SOI”, International Electrical Engineering Congress (iEECON), IEEE, 2022; https://ieeexplore.ieee.org/document/9741701
Fatima, A., Pethe, A., “Periodic Analysis of Resistive Random Access Memory (RRAM) based Swish Activation Function”, Springer Nature Computer Science Journal, 2022; https://doi.org/10.1007/s42979-022-01059-3
A. Fatima and A. Pethe, "NVM Device based Deep Inference Architecture using Self-Gated Activation Functions", Int. Conference on Machine vision and Augmented Intelligence (MAI), Sringer 2021 https://doi.org/10.1007/978-981-16-5078-9_4
A. Verma and A. Pethe, "Modelling and Analysis of Multi-Junction Photovoltaic Cells," 2020 IEEE 17th India Council International Conference (INDICON), 2020, pp. 1-6, doi: 10.1109/INDICON49873.2020.9342293
A. Lee, A. Pethe, A. Joshi, G. Bouche, S. Koh, H. Nimii, S. Majumdar, Z. Hong, N. Fuchigami, I. Lim, A. Bodke, M. Raymond, P. Besser and S. Barstow, “ Impact of thermal treatments on the Schottky barrier height reduction at the Ti-TiOx-Si interface for contact resistance reduction”, Si Nanoelectronics Workshop, 2014
D. Kuzum, A.J. Pethe, T, Krishnamohan, Saraswat K.C., “Ge (100) and (111) N- and PFETs with high mobility and low-T mobility characterization”, IEEE Transactions on Electron Devices, 56, 2009 pp. 648-655
D. Kuzum, T. Krishnamohan, A. Pethe, Y. Oshima, Y. Sun, J. McVittie, PA. Pianetta,PC. McIntyre, K.C. Saraswat, “Ge Interface passivation techniques and thermal stability”,ECS Transactions, 16, 2008 pp. 1025-1029
K.C. Saraswat, D. Kim, T. Krishnamohna, D. Kuzum, A.K. Okyay, A. Pethe, H. Y. Yu, “Germanium for high-performance MOSFETs and optical interconnects”, ECSTransactions, 16, 2008 pp. 3-12 Invited
D. Kuzum, T. Krishanmohan, A.J. Pethe, A.K. Okyay, Y. Oshima, Y. Sun, J. P McVittie, P. A. Pianetta, P. C. McIntyre and K. C. Saraswat, “Ge-interface engineering with ozone oxidation for low interface-state density”, IEEE Electron Device Letters, 29, 2008 pp. 328-330
K.C. Saraswat, D. Kim, T. Krishnamohan and A. Pethe, “Performance Limitations of Si bulk CMOS and alternatives to future ULSI”, ECS Transactions 2008, 8 pp. 9-14 Invited
D. Kuzum, A. J. Pethe, T. Krishnamohan, Y. Oshima, y. Sun, J. P. McVittie, P. A. Pianetta, P.C. McIntyre and K. C. Saraswat, “Interface-Engineered Ge (100) and (111) Nand P-FETs with High Mobility”, IEDM, 2007 Washington D.C.
A.K. Okyay, A. J. Pethe, D. Kuzum, S. Latif, D. A. B. Miller and K. C. Saraswat, "Novel Si-based CMOS Optoelectronic Switching Device Operating in the Near Infrared", OFC/NFOEC conference, Los Angeles, March 2007.
Ali K. Okyay, A. J. Pethe, D. Kuzum, S. Latif, D. A. Miller, K. C. Saraswat, "Novel Si-Based Optoelectronic Switching Device: Light to Latch," CLEO/QELS 2007, Baltimore, Maryland, May 6-11, 2007.
A.K. Okyay, A. J. Pethe, D. Kuzum, S. Latif, D. A. Miller and K.C. Saraswat, “SiGe optoelectronic metal-oxide semiconductor field effect transistor”, Optics Letters, Vol. 32,Iss. 14, pp. 2022-2024.
A. Pethe and K. Saraswat, "High Mobility, Low Parasitic Resistance Si/Ge/Si Heterostructure Channel Schottky Source/Drain PMOSFETs," IEEE Device Research Conf., South Bend, Indiana, June 2007
A. Pethe and K. C. Saraswat, "Interface state Density measurement at GeOxNy-Ge interface for Ge MIS Application,” IEEE SISC, Dec. 2006.
A. Pethe, T. Krishnamohan, D. Kim, S. Oh, H.-S.P. Wong, Y. Nishi and K. Saraswat, "Investigation of the Performance Limits of III-V Double-Gate NMOSFETs", 16th Biennial University/Government/Industry Microlectronics Symposium, San Jose, CA 2006. Invited
K. C. Saraswat, C. O. Chui, T. Krishnamohan, D. Kim, A. Nayfeh and A. Pethe, "High Performance Germanium MOSFETs", Symp. B, E-MRS IUMRS ICEM Spring Meet., Nice (France), May 29 - June 2, 2006. Published in Materials Science and Engineering: B, Vol. 135, No. 3, 15 Dec. 2006, pp.242-249. Invited
K. C. Saraswat, C. O. Chui, T. Krishnamohan and A. Pethe, "High Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs," IEEE Int. Electron Dev. Meet. San Francisco, Dec. 2006. Invited
A.J.Pethe, T. Krishnamohan, D. Kim, S. Oh, H.-S.P. Wong, Y. Nishi and K. Saraswat, "Investigation of the Performance Limits of III-V Double-Gate NMOSFETs", IEEE International Electron Devices Meeting (IEDM) 2005 Technical Digest, pp. 619-622, Washington, D.C., Dec. 2005.
A. Pethe, T. Krishnamohan, K. Uchida, K. C. Saraswat, "Analytical Modeling of Ge and Si Double-Gate(DG) NFETs and the Effect of Process Induced Variations (PIV) on Device Performance," IEEE SISPAD, Sept. 2004.

BITS Pilani

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