BITS Pilani

  • Page last updated on Thursday, November 18, 2021

You are here:

Publications

banner
Publications

Publications

Peer Reviewed Journals

 
  1. M. Gupta and V. P. H. Hu, “Sensitivity Analysis of Negative Capacitance Junctionless Transistor and Design Aspects for High Performance Applications,” IEEE Transactions on Electron Devices, vol. 68, no. 8, pp. 4136-4143, 2021.                                                                                                                                                      
  2. M. Gupta and V. P. H. Hu, “Influence of Channel Doping on Junctionless and Negative Capacitance Junctionless Transistors,” Journal of Solid-State Science and Technology, vol. 10, 065009, 2021.                     
  3. A. Kranti and M. Gupta, “Junctionless Device Cross-section: A key Aspect for Overcoming Boltzmann Tyranny,” ECS Transactions, vol. 97, no. 5, pp. 39-44, 2020. (Invited)                                                                  
  4. M. Gupta and V. P. H. Hu, “Negative Capacitance Junctionless Device with Mid-gap Work-function for Low Power Applications,” IEEE Electron Device Letters, vol. 41, no. 3, pp. 473-476, 2020.                                       
  5. M. Gupta and A. Kranti, “Bi-directional Junctionless Transistor for Logic and Memory Applications,” IEEE Transactions on Electron Devices, vol. 66, no. 10, pp. 4446-4452, 2019.                                                               
  6. M. Gupta and A. Kranti, “Relevance of Device Cross-Section to Overcome Boltzmann Switching Limit in 3D Junctionless Transistor,” IEEE Transactions on Electron Devices, vol. 66, no. 9, pp. 2704-2709, 2019.            
  7. S. Mokkapati, N. Jaiswal, M. Gupta, and A. Kranti, “Gate-All-Around Nanowire Junctionless Transistor based Hydrogen Gas Sensor” IEEE Sensors Journal, vol. 19, no. 13, pp. 4758-4764, 2019.                                          
  8. M. Gupta and A. Kranti, “Regaining Switching by Overcoming Single Transistor Latch Effect in Ge Junctionless MOSFETs,” IEEE Transactions on Electron Devices, vol. 65, no. 9, pp. 3600-07, 2018.               
  9. M. Gupta and A. Kranti, “Raised Source/Drain Germanium Junctionless MOSFET for Subthermal OFF-to-ON Transition,” IEEE Transactions on Electron Devices, vol. 65, no. 6, pp. 2406-12, 2018.                                                              
 International Conferences
  1. M. Gupta and V. P. H. Hu, “Optimization of Junctionelss Ferroelectric Field-Effect Transistors for Non-Volatile Memory Applications,” 2021 Solid State Devices and Materials (SSDM 2021).                                                                                                    
  2. M. Gupta and V. P. H. Hu, “Improved Switching Time in Negative Capacitance Junctionless Transistor,” 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA 2021), Hsinchu, Taiwan, pp. 1-2, 2021.                                                                                                                                                                                          
  3. M. Gupta and V. P. H. Hu, “Influence of Channel Doping on Junctionless and Negative Capacitance Junctionless Transistors,” International Electron Devices and Material Symposium (IEDMS 2020).                                                                                                                                                            
  4.   M. Gupta and V. P. H. Hu, “Subthreshold Behaviour of Ferroelectric Junctionless Transistor,” 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA 2020), Hsinchu, Taiwan, pp. 1-2, 2020.                                                                                                                                                                                   
  5. M. Gupta and V. P. H. Hu, “Comparative Analysis of Negative Capacitance Inversion Mode and Junctionless Transistor for Low Power Applications” IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, San Jose, USA, pp. 1-2, 2019.                                                                                                                  
  6. A. Kranti and M. Gupta, “Junctionless Device Cross-section: A key Aspect for Overcoming Boltzmann Tyranny,” 237th ECS meeting, Montreal, Canada, 2020. (Invited)                                                                              
  7. M. Gupta, and A. Kranti, “Optimization of Multiple Physical Phenomena through a Universal Metric in Junctionless Transistors,” 32nd International Conference on VLSI Design and 18th International Conference on Embedded System, New Delhi, India, 2019.                                                                                                              
  8.  M. Gupta, and A. Kranti, “Hysteresis Free sub-60 mV/dec Subthreshold Swing in Junctionless MOSFETs,” 31st International Conference on VLSI Design and 17th International Conference on Embedded System, Pune, India, pp. 133-38, 2018.                                                                                                                                           
                                                                                                                                                                                   

Quick Links

    An Institution Deemed to be University estd. vide Sec.3 of the UGC Act,1956 under notification # F.12-23/63.U-2 of Jun 18,1964

    © 2024 Centre for Software Development,SDET Unit, BITS-Pilani, India.

    Designed and developed by fractal | ink design studios